Deposition of TiN and HfO[sub 2] in a commercial 200 mm remote plasma atomic layer deposition reactor
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چکیده
منابع مشابه
Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.
We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architect...
متن کاملIntroduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses Cu(In,Ga)(S,Se)2 and CdTe, which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (SnS). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of bis(N,N’...
متن کاملLow Temperature Atomic Layer Deposition of Tin Oxide
Atomic layer deposition (ALD) of tin oxide (SnOx) films was achieved using a newly synthesized tin precursor and hydrogen peroxide. We obtained highly pure, conductive SnOx films at temperatures as low as 50 C, which was possible because of high chemical reactivity between the new Sn precursor and hydrogen peroxide. The growth per cycle is around 0.18 nm/cycle in the ALDwindow up to 150 C, and ...
متن کاملModelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor
A calculalion modcl to study alornic layer dcposifiorl (A1 ,I)) in low-pressure charinel-type CVI) rcactor with many par;illcl suhstrattrs is dcscrihccl. 'I'hc calcul;ltions are based on continuity equation and kinetic equation For su~facc covelagc Iiormation o r : L stc;%dy-statc :~d:;orption wavc propagating bctwccn the substrates during a precursor pulse is str~dicd. l 'hc effect of diffusi(...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2007
ISSN: 0734-2101
DOI: 10.1116/1.2753846